1996 Jul 30
4
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb
=25?C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cis
input capacitance
VDS
=20V; VGS
=
?1V; f=1MHz
?
4
?
pF
Crs
reverse transfer capacitance VDS
=20V; VGS
=
?1V; f=1MHz
?
1.1
?
pF
Cos
output capacitance
VDS
=20V; VGS
=
?1V; f=1MHz
?
1.6
?
pF
gis
input conductance
VDS
=15V; VGS
=0; f=200MHz
?
250
??S
gos
output conductance VDS
=15V; VGS
=0; f=200MHz
?
40
??S
?yfs?
forward transfer
admittance V
DS
=15V; VGS
=0; f=1kHz 3
?
6.5 mS
VDS
=15V; VGS
=0; f=200MHz
?
6
?
mS
?yrs?
reverse transfer admittance VDS
=15V; VGS
=0; f=200MHz
?
1.4
?
mS
?yos?
output admittance VDS
=15V; VGS
=0; f=1kHz
?
25
??S
fgfs
cut-off frequency
VDS
=15V; VGS
=0; gfs
= 0.7 of its
value at 1 kHz
?
700
?
MHz
Fnoise figure VDS
=15V; VGS
=0; f=100MHz;
RG
=1k?
(common source);
input tuned to minimum noise
?
1.5
?
dB
handbook, halfpage?10
?10?3
0
?10?2
?10?1
?1
150
50
MGE785
100
typ
Tj
(
°C)
IGSS
(nA)
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
VDS
=0; VGS
=
?20 V.
Fig.3 Transfer characteristics for BF245A;
typical values.
handbook, halfpage6ID
40?2VGS
(V)
(mA)
0?
MGE789
5
4
3
2
1
VDS
=15V; Tj
=25?C.
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